Imec successfully printed a 20nm pitch line/space pattern using high-NA interference lithography. As no high-NA EUV scanners are available yet, experiments such as these help to develop the lithographic materials required for the successor of ‘regular’ 0.33 NA EUV lithography. ASML’s first high-NA tool, called the EXE:5000, is slated for introduction in 2022.
Moving on to high-NA EUV lithography isn’t simply a matter of installing a new tool. New insights into the interaction of photons with photoresists are necessary. Imec is studying these dynamics in its Attolab research facility, set up together with the US high-tech laser company KMLabs. This involves emulating high-NA exposures by generating finely detailed interference patterns using mirrors and pulsed lasers, while simultaneously running time-resolved spectroscopy experiments.
The Attolab is the first to print 20nm pitch patterns using 13.5 nm EUV light under high-NA conditions. It expects to eventually go down to 8nm pitch. Apart from getting a head start on chip manufacturing using high-NA scanners, the research also provides additional insights into 0.33 NA lithography, which is already being pushed to its ultimate single-exposure resolution limits. Other materials research areas, such as in development of next-generation logic, memory and quantum devices, can also benefit from the analytic capabilities in Leuven.
Next up is a move to larger substrates. Currently, the Attolab is installing a 300mm-wafer-compatible EUV interference lithography beamline.
PhD pitches at the Benelux RF Conference
Learn about the latest trends and developments in high-end RF techniques. On 24 May, the Benelux RF Conference will take place in Nijmegen. New this year are the PhD pitches, in which young professionals present their research results. Make sure to reserve your seat in time and register now.