Samsung says it will obtain technological leadership in the foundry space in 2025, when the 2nm node is introduced. “To be honest, our foundry technology is one or two years behind TSMC’s. However, once TSMC joins us in the race for 2nm technology, Samsung will lead the way,” said Kyung Kye-hyun, head of Samsung’s semiconductor business at a lecture at the Korea Advanced Institute of Science and Technology.
Although the world’s biggest memory maker, Samsung lags far behind TSMC in terms of market share. The Koreans were the first to debut gate-all-around (GAA) transistor technology in volume production, at their 3nm node to be precise. TSMC will make the switch to fully enveloped gates at the 2nm node, which, like Samsung’s, is expected to enter volume production in 2025. “Our customers are favorable about our GAA technology. Almost all major companies are working with us. Our customer base is growing,” Kyung said.
Intel, which is vying for foundry customers as well, intends to introduce its 2nm-equivalent process in the second half of 2024.