European alliance develops next-gen FD-SOI technology

CEA-Leti, Globalfoundries, Soitec and STMicroelectronics have partnered up to move FD-SOI to lower nodes. Globalfoundries’ Dresden fab has been running a number of 22nm FD-SOI process variations for years and rolled out a 12nm platform in 2016, but that was put on hold. ST currently runs a 28nm FD-SOI process at its fab in Crolles.

FD-SOI is a planar alternative to bulk CMOS. Manufactured on a thin layer of silicon on top of an insulating buried oxide layer, one of FD-SOI’s main features is practically no leakage currents. The technology also offers reduced process complexity compared to 3D FinFETs as well as reduced device dimensions, along with the power and performance improvements that come with smaller geometries. Globalfoundries and ST market the technology as a particularly good fit for IoT, mobile (RF) and automotive applications.

“FD-SOI is 25 percent faster than equivalent transistors on solid silicon, and consumes up to 40 percent less energy, particularly thanks to leakage control. Today, FD-SOI is at a turning point in its history supporting the quest for performance and energy frugality,” says CEA-Leti CEO Sébastien Dauvé. “CEA-Leti has continuously worked to improve and scale the technology, especially in very aggressive technological nodes,” he adds.